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Transys
Electronics
LIMITED
TO-251/TO-252-2Plastic-Encapsulated Transistors
6. 5 0 A. 10 0 2 . 30 A. 05 0 0. 5 1 A. 03 0
14. 70
5 a
5 a
FEATURES Power dissipation PCM: 1 W (Tamb=25)
0. 80 A. 0 5 0 0. 6 0 A. 0 5 0
1. BASE 2. COLLECTOR 3. EMITTER
2. 3 0 A. 05 0
2. 3 0 A. 0 5 0
1 . 20
0. 51 A. 03 0
123
6. 50 A. 15 0 5. 30 A. 10 0 2. 30 A. 10 0 0. 51 A. 05 0
Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-off time Fall time Storage time VCE(sat) VBE(sat)
7. 70
0 5. 50 A. 10
2SD1802
TRANSISTOR (NPN)
TO-251 TO-252-2
5. 3 0 A. 05 0
5 a
5 a
1. 20
0 9. 70 A. 20
0 0. 75 A. 10
0. 51 A. 10 0 0 0 . 10 5 a
5 a
0 1. 60 A. 15
2. 30 A. 10 0
0. 60 A. 10 0 2. 30 A. 10 0 0. 51
123
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=10A, IE=0 Ic=1mA, IB=0 IE=10A, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=3A IC=2A, IB=100mA IC=2A, IB=100mA VCE=10V, IC=50mA VCB=10V, IE=0,f=1MHz
60 50 6 1 1 100 35 0.5 1.2 150 25
70
0 2. 70 A. 20
0 a a 9
0. 6
0. 80 A. 10 0
0 5. 50 A. 10
A A
560
V V MHz pF
fT
Cob ton tf ts
Vcc=25V, Ic=1A IB1=-IB2=0.1A
650 35
nS
CLASSIFICATION OF hFE(1) Rank Range Marking R 100-200 S 140-280 T 200-400 U 280-560
Typical Characteristics
2SD1802

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